pnp tip2955 npn TIP3055 15/10/2012 comset semiconductors 1 | 3 semiconductors silicon power transistors the TIP3055 is a npn epitaxial-base transistor in to3pn package.it is intended for power switching circuits, series and shunt regulators, output stage and hi-fi amplifiers. the complementary is the tip2955 for pnp types voltage and curent are negative. compliance to rohs. absolute maximum ratings symbol ratings value unit v cbo collector-base voltage 100 v v ceo collector-emitter voltage 60 v v ebo emitter-base voltage 7 v i c collector current 15 a i b base current 7 a p t total dissipation @ t mb < 25 90 w t j junction temperature 150 c t s storage temperature range -65 to +150 thermal characteristics symbol ratings value unit r thjc from junction to case thermal resistance 1.39 c/w http://www..net/ datasheet pdf - http://www..net/
pnp tip2955 npn TIP3055 15/10/2012 comset semiconductors 2 | 3 semiconductors electrical characteristics tc=25c unless otherwise noted symbol ratings test condition(s) min typ max unit v ceo (*) collector-emitter breakdown voltage i c = 30 ma, i b =0 60 - - v i ceo collector cutoff current i b =0, v ce = 30 v - - 700 a i cer collector cutoff current v ce = 70 v, r be = 100 ? - - 1 ma i cex collector cutoff current v ce = 70 v, v be = 1.5 v - - 5 ma i ebo emitter cutoff current v eb = 7 v, i c =0 - - 5 ma v ce(sat) (*) collector-emitter saturation voltage i c = 4 a, i b = 400 ma - - 1.1 v i c = 10 a, i b = 3.3 a - - 3 v be (*) base-emitter on voltage i c = 4 a, v ce = 4 v - - 1.8 v h fe (*) dc current gain i c = 4 a, v ce = 4 v 20 - 70 - i c = 10 a, v ce = 4 v 5 - - i s/b second breackdown collector current. with base forward biased v ce = 30 v, t= 1.0 s non repetitive 3 - - a f t transition frequency v ce = 10 v, i c = 0.5 a f= 1 khz 2.5 - - mhz (*) pulse width 300 s, duty cycle 1.5% http://www..net/ datasheet pdf - http://www..net/
pnp tip2955 npn TIP3055 15/10/2012 comset semiconductors 3 | 3 semiconductors mechanical data case to3pn n on isolated plastic package revised august 2012 ????????? ? information furnished is believed to be accurate and reliable. ho wever, comset semiconductors assumes no responsibility for the consequences of use of such information nor for any infringement of patents or ot her rights of third parties which may results from its use. da ta are subject to change without notice. co mset semiconductors makes no warranty, representation or guarantee re garding the suitability of its products for any particular purpose, nor does comset semicond uctors assume any liability aris ing out of the application or us e of any product and specifica lly disclaims any and all liability, including without limitation consequential or in cidental damages. comset semiconductors? products are not au thorized for use as critical components in life support devices or systems. ? ? www.comsetsemi.com info@comsetsemi.com dimensions (mm) min. max. a 15.20 1600 b 1.90 2.10 c 4.60 5.00 d 3.10 3.30 e 9.60 f 2.00 g 0.35 0.55 h 1.40 j 5.35 5.55 k 20.00 l 19.60 20.20 m 0.95 1.25 n 2.00 o 3.00 p 4.00 r 4.00 s 1.80 t 4.80 5.20 pin 1 : base pin 2 : collector pin 3 : emitter package collector http://www..net/ datasheet pdf - http://www..net/
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